| PART |
Description |
Maker |
| MMG3012NT1-12 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor...
|
| MMZ25332B |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMA20312BV |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor...
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
| MMG3001NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3004NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
| LL1608-FH1N2S RC0402JR-07430RL GRM1555C1H101JA01 G |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| BC847BS09 |
NPN GENERAL PURPOSE DUAL TRANSIS
|
Pan Jit International Inc.
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
